unisonic technologies co.,ltd 2sc3320 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2014 unisonic technologies co., ltd qw-r214-008.e high voltage high speed switching ? features * high voltage, high speed switching * high reliability ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sc3320l-x-t3p-t 2sc3320l-x-t3p-t to-3p b c e tube 2sc3320l-x-t3n-t 2sc3320l-x-t3n-t to-3pn b c e tube note: pin assignment: b: base c: collector e: emitter ? marking information package marking to-3p to-3pn
2sc3320 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r214-008.e ? absolute maximum ratings ( t c = 25c) parameter symbol ratings unit collector base voltage v cbo 500 v collector emitter voltage v ceo 400 v v ceo ( sus ) 400 v emitter base voltage v ebo 7 v collector current i c 15 a base current i b 5 a power dissipation p d 80 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction to case jc 1.55 c/w ? electrical specifications (t c =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit collector base voltage v cbo i cbo =1ma 500 v collector emitter voltage v ceo i ceo =10ma 400 v v ceo ( sus ) i c =0.2a 400 v emitter base voltage v ebo i ebo =1ma 7 v collector emitter sa turation voltage v ce ( sat ) i c =6a, i b =1.2a 1 v base emitter satu ration voltage v be ( sat ) 1.5 v collector cut-off current i cbo v cbo =500v 1 ma emitter cut-off current i ebo v ebo =7v 1 ma dc current gain h fe i c =6a, v ce =5v 10 45 switching time t on i c =7.5a, i b1 =1.5a, i b2 =-3a r l =20 ? , p w =20 s, duty 2% 0.5 s t stg 1.5 s t f 0.15 s ? classification of h fe rank a b c d e f range 10~15 15~20 20~25 25~30 30~35 35~45
2sc3320 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r214-008.e ? switching time test circuit
2sc3320 npn epitaxial silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r214-008.e ? typical characteristics collector emitter voltage, v ce (v) dc current gain, h fe 0.05 0.1 0.3 0.5 51020 base and collector saturation voltage 0.01 0.03 0.05 0.1 0.3 0.5 1 3 t c =25 i c =5i b v be(sat) v ce(sat) 3 1 4 500 safe operating area 0.03 0.1 t c =25 single pulse dc p w =1ms 300 100 50 30 10 5 3 1 0.05 0.3 0.5 1 3 5 10 30 1000 1 0 s 1 0 0 s collector current, i c (a) collector emitter voltage, v ce (v)
2sc3320 npn epitaxial silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r214-008.e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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